PTF10031 Datasheet, PDF (2/6 Pages) Ericsson – 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10031
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(V_DD = 28 V, P_OUT = 50 W, I_DQ = 350 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 350 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 50 W, I_DQ = 350 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 50 W, I_DQ = 350 mA, f = 960 MHz—
all phase angles at frequency of test)
Typical Performance
Gain vs. Power Output
16
15
14
13
12
V_DD = 28 V
I_DQ = 350 mA
11
f = 960 MHz
10
0
10
20 30
40 50
60 70
Power Output (Watts)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
2.8
—
Siemens
Symbol Min
G_ps
12.0
P-1dB
50
h
50
Y
—
Typ Max Units
13.0
—
dB
55
—
Watts
55
—
%
—
10:1
—
Intermodulation Distortion vs. Power Output
-15
V_DD = 28 V
-25 ^{IDQ = 350 mA}
f₁ = 950.000 MHz
3rd Order
f₂ = 950.100 MHz
-35
5th
-45
7th
-55
0
10 20 30 40 50 60 70
Output Power (Watts PEP)
2