PTF10031 Datasheet, PDF (1/6 Pages) Ericsson – 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10031
50 Watts, 1.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0
dB of gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Typical Power Out & Efficiency vs. Power In
70
90
60
80
50 Output Power (W)
40
70
Efficiency (%)
60
30
20
10
0
0
50
V_DD = 28 V
40
I_DQ = 350 mA
30
f = 960 MHz
20
1
2
3
4
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation T_CASE = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
All published data at T_CASE = 25°C unless otherwise indicated.
1
• Performance at 960 MHz, 28 Volts
- Output Power = 50 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• Back Side Common Source
• Available in Package 20235 as PTF 10015
• 100% Lot Traceability
10031 _A-1234569744
Package
20222
Package
20235
10015 _A-1234561970
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
175
1.0
-65 to 150
1.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e