PTF10019 Datasheet, PDF (2/6 Pages) Ericsson – 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10019
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 26 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Typical Performance
Typical POUT, Gain, and Efficiency (at P-1 dB)
vs. Frequency
16
90
Output Power (W)
15
80
14
70
Power Gain (dB)
13
12
800
60
Efficiency (%)
50
850
900
950
1000
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
1.0
mA
—
5.0
Volts
3.0
—
Siemens
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
215
1.25
–40 to +150
0.8
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
16
70
Gain (dB)
14
60
12
50
Efficiency (%)
10
40
8 _{VDD = 28 V, IDQ = 600 mA, POUT = 70 W} -305
6
-1250
Return Loss (dB)
4
900
915
930
945
Frequency (MHz)
-2150
960
2