PTF10019 Datasheet, PDF (1/6 Pages) Ericsson – 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10019
70 Watts, 860–960 MHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended
for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz
range. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Typical Output Power vs. Input Power
80
60
40
20
0
0.0
74
Output Power
66
58
Efficiency
50
42
V_DD = 28 V
34
I_DQ = 600 mA
26
f = 960 MHz
18
1.0
2.0
3.0
Input Power (Watts)
10
4.0
• INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
- Output Power = 70 Watts
- Power Gain = 14.5 dB Typ
- Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
A-1¹₂₃⁰₄₅0_6189955
Package 20237
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, Pout = 70 W, I_DQ = 600 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 600 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, Pout = 70 W, I_DQ = 600 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, Pout = 70 W, I_DQ = 600 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at T_CASE = 25°C unless otherwise indicated.
Symbol Min
G_pe
13.0
P-1dB
70
h
45
Y
—
Typ
14.5
75
50
—
Max Units
—
dB
—
Watts
—
%
10:1
—
e
1