PTF10009 Datasheet, PDF (2/6 Pages) Ericsson – 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor

PTF 10009
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side) Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 25 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ
—
—
—
2.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Dynamic Characteristics
Characteristic (per side)
Input Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
Output Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, Pout = 85 W, I_DQ = 600 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, Pout = 85 W, I_DQ = 600 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, Pout = 85 W, I_DQ = 600 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol Min
C_iss
—
C_oss
—
C_rss
—
Typ Max Units
90
—
pF
36
—
pF
1.9
—
pF
Symbol Min
G_ps
12.0
h
47
Y
—
Typ Max Units
13.0
—
dB
50
—
%
—
5:1
—
Impedance Data (data shown for fixed-tuned broadband circuit)
(V_DD = 28 V, Pout = 85 W, I_DQ = 600 mA)
Z Source
D ^{Z Load}
G
S
G
Frequency
MHz
860
900
960
1000
Z Source W
R
jX
1.76
-0.78
1.80
-0.05
1.58
0.69
1.39
1.35
D
Z Load W
R
jX
5.00
-1.50
4.80
-0.78
4.24
0.36
3.95
1.41
2
Z₀ = 50 W