PTF10009 Datasheet, PDF (1/6 Pages) Ericsson – 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor

PTF 10009
85 Watts, 1.0 GHz
GOLDMOS^™ Field Effect Transistor
Description
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 50% efficiency and
13.0 dB of gain. Nitride surface passivation and full gold metallization
are used to ensure excellent device lifetime and reliability.
Typical Output Power and Efficiency vs. Input Power
100
90
80
70
60
50
40
30
20
10
0
0.0
80
Output Power (W)
72
64
56
48
Efficiency (%) ₄₀
32
V_DS = 28 V
24
I_DQ = 600 mA Total 16
f = 960 MHz
8
0
1.0
2.0
3.0
4.0
5.0
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage ⁽¹⁾
Gate-Source Voltage ⁽¹⁾
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
(1)_{per side}
All published data at T_CASE = 25°C unless otherwise indicated.
• Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% lot traceability
10009 _1234569744
Package 20230
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
65
±20
200
270
1.54
-65 to 150
0.65
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1