PTF10007 Datasheet, PDF (2/6 Pages) Ericsson – 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10007
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 5 mA
Drain-Source Leakage Current V_DS = 28 V, V_GS = 0 V
Gate Threshold Voltage
V_DS = 10 V, I_D = 75 mA
Forward Transconductance
V_DS = 10 V, I_D = 3 A
RF Specifications (100% Tested)
Characteristic
Gain
(V_DD = 28 V, P_OUT = 35 W, I_DQ = 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V_DD = 28 V, I_DQ = 300 mA, f = 960 MHz)
Drain Efficiency
(V_DD = 28 V, P_OUT = 35 W, I_DQ = 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(V_DD = 28 V, P_OUT = 35 W, I_DQ = 300 mA, f = 960 MHz—
all phase angles at frequency of test)
Typical Performance
P_OUT, Gain & Efficiency (at P-1dB) vs. Frequency
30
70
25
Efficiency (%) ₆₀
20
50
15
G ain (d B )
40
10
5
V_DD = 28 V
Output Pow er (W) ₃₀
I_DQ = 300 mA
0
20
400 500 600 700 800 900 1000
Frequency (MHz)
e
Symbol
V_(BR)DSS
I_DSS
V_GS(th)
g_fs
Min
65
—
3.0
—
Typ Max Units
70
—
Volts
—
1.0
mA
—
5.0
Volts
2.8
—
Siemens
Symbol Min
G_ps
12.0
P-1dB
35
h
50
Y
—
Typ Max Units
13.5
—
dB
—
—
Watts
55
—
%
—
10:1
—
Broadband Test Fixture Performance
20
60
Efficiency (%)
16
50
Gain (dB)
12
8
V_DD = 28 V
40
I_DQ = 300 mA
-305
P_OUT = 35 W
-2105
Return Loss (dB) _-1205
4
0
925 930 935 940 945 950 955 960-35
Frequency (MHz)
2