PTF10007 Datasheet, PDF (1/6 Pages) Ericsson – 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

PTF 10007
35 Watts, 1.0 GHz
GOLDMOS ^® Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large
signal amplifier applications to 1.0 GHz. It operates at 55% efficiency
and 13.5 dB of gain. Nitride surface passivation and gold
metallization ensure excellent device lifetime and reliability.
Typical Output Power & Efficiency
vs. Input Power
50
100
Output Pow er (W)
40
80
Ef f iciency (%)
30
60
20
10
0
0
V_DD = 28 V
40
I_DQ = 300 m A ₂₀
f = 960 MHz
0
1
2
3
Input Power (Watts)
• Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% lot traceability
• Available in Package 20235 as PTF 10052
10007 _A-1234569723
Package
20222
Package
20235
10052 _A-1234569999
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_qJC
Value
60
±20
200
120
0.7
–40 to +150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1