PTB20206 Datasheet, PDF (2/2 Pages) Ericsson – 1.0 Watt, 470-860 MHz RF Power Transistor

PTB 20206
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Output Capacitance
Conditions
I_C = 5 mA, I_B = 0 A
V_BE = 0 V, I_C = 5 mA
I_B = 0 A, I_C = 5 mA, R_BE = 22 Ω
I_C = 0 A, I_E = 5 mA
V_CE = 5 V, I_C = 250 mA
V_cb = 20 V, I_E = 0 A, f = 1 MHz
Symbol
V_(BR)CEO
V_(BR)CES
V_(BR)CER
V_(BR)EBO
h_FE
Cobo
Min
25
55
40
3.5
20
—
RF Specifications (100% Tested)
Characteristic
Gain
(V_CE = 20 Vdc, Pout = 1 W, I_CQ = 360 mA, f = 860 MHz)
Two-tone Intermodulation Distortion
(V_CE = 20 Vdc, Pout = 1 W(PEP), I_CQ = 360 mA,
f₁ = 860 MHz, f₂ = 860.1 MHz),
Load Mismatch Tolerance
(V_CE = 20 Vdc, Pout = 2 W, I_CQ = 360 mA,
f = 860 MHz—all phase angles at frequency of test)
Symbol Min
G_pe
11
IM₂
—
Ψ
—
Impedance Data (data shown for fixed-tuned broadband circuit)
(V_CE = 20 Vdc, Pout = 1 W, I_CQ = 360 mA)
Z Source
Z Load
e
Typ
30
70
—
5
50
4.5
Max
—
—
—
—
120
—
Units
Volts
Volts
Volts
Volts
—
pF
Typ Max Units
11.5
—
dB
-46
-44
dBc
—
30:1
—
Z₀ = 50 Ω
Frequency
MHz
470
704
782
860
Z Source
R
jX
7.2
-6.4
6.9
-4.1
5.8
-4.1
5.8
-3.6
Z Load
R
jX
13.7
-6.9
12.8
2.3
14.4
5.0
17.2
7.0
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: [phone]
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [e-mail]
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB Uen Rev. B 09-28-98