PTB20206 Datasheet, PDF (1/2 Pages) Ericsson – 1.0 Watt, 470-860 MHz RF Power Transistor

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PTB 20206
1.0 Watt, 470–860 MHz
RF Power Transistor
Description
The 20206 is an NPN common emitter RF power transistor intended
for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
• Class A Characteristics
• 1.0 Watt, 470–860 MHz
• -44 dBc Max Two-tone IMD at 1 W(PEP)
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
V_CE = 20 V
I_CQ = 360 mA
f = 860 MHz
0.1
0.2
0.3
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20206 _{LOT CODE}
Package 20206
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
1.7
13.5
0.077
–40 to +150
13.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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