PTB20162 Datasheet, PDF (2/2 Pages) Ericsson – 40 Watts, 470-900 MHz RF Power Transistor

PTB 20162
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
I_B = 0 A, I_C = 50 mA, R_BE = 22 Ω
V_BE = 0 V, I_C = 50 mA
I_C = 0 A, I_E = 20 mA
V_CE = 5 V, I_C = 1 A
Symbol
V_(BR)CER
V_(BR)CES
V_(BR)EBO
h_FE
Min
50
50
4.0
20
e
Typ Max Units
—
—
Volts
—
—
Volts
5
—
Volts
50
100
—
RF Specifications (100% Tested)
Characteristic
Gain
(V_CC = 25 Vdc, Pout = 40 W, I_CQ = 200 mA, f = 900 MHz)
Collector Efficiency
(V_CC = 25 Vdc, Pout = 40 W, I_CQ = 200 mA, f = 900 MHz)
Power Output at 1 dB Compression
(V_CC = 25 Vdc, I_CQ = 200 mA, f = 900 MHz)
Intermodulation Distortion
(V_CC = 25 Vdc, Pout = 30 W(PEP), I_CQ = 60 mA,
f₁ = 899 MHz, f₂ = 900 MHz)
Load Mismatch Tolerance
(V_CC = 25 Vdc, Pout = 40 W(CW), I_CQ = 200 mA,
f = 900 MHz—all phase angles at frequency of test)
Symbol Min
G_pe
8.0
η_C
50
P-1dB
40
IMD
-32
Typ Max Units
9.5
—
dB
—
—
%
45
—
Watts
-35
—
dBc
Ψ
—
—
30:1
—
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
12
11
10
9
8
7
6
860
V_CC = 25 V
I_CQ = 200 mA
Pout = 30 W
870
880
890
900
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: [phone]
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [e-mail]
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20162 Uen Rev. C 09-28-98