PTB20162 Datasheet, PDF (1/2 Pages) Ericsson – 40 Watts, 470-900 MHz RF Power Transistor

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PTB 20162
40 Watts, 470–900 MHz
RF Power Transistor
Description
The 20162 is an NPN common emitter RF power transistor intended
for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power & Efficiency vs. Input Power
60
70
50
60
40
50
30
40
20
V_CC = 25 V
30
I_CQ = 200 mA
10
f = 900 MHz
20
0
10
01 2345 678
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• 40 Watts, 470–900 MHz
• Class AB Characteristics
• 50% Min Collector Efficiency at 40 Watts
• Gold Metallization
• Silicon Nitride Passivated
20162 _{LOT CODE}
Package 20226
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
10.0
80
0.45
–40 to +150
2.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98