PTB20146 Datasheet, PDF (2/2 Pages) Ericsson – 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor

PTB 20146
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
I_B = 0 A, I_C = 10 mA, R_BE = 22 Ω
V_BE = 0 V, I_C = 5 mA
I_C = 0 A, I_E = 5 mA
V_CE = 5 V, I_C = 250 mA
Symbol
V_(BR)CER
V_(BR)CES
V_(BR)EBO
h_FE
Min
50
50
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(V_CC = 26 Vdc, Pout = 0.4 W, I_CQ = 140 mA, f = 2.0 GHz)
Output Power at 1 dB Compressed
(V_CC = 26 Vdc, I_CQ = 140 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V_CC = 26 Vdc, Pout = 0.4 W, I_CQ = 140 mA,
f = 2.0 GHz—all phase angles at frequency of test)
Symbol Min
G_pe
8
P-1dB
0.4
Ψ
—
Impedance Data (data shown for fixed-tuned broadband circuit)
(V_CC = 26 Vdc, Pout = 0.4 W, I_CQ = 140 mA)
Z Source
Z Load
e
Typ Max Units
—
—
Volts
—
—
Volts
5
—
Volts
40
—
—
Typ Max Units
10
—
dB
0.6
—
Watts
—
5:1
—
Frequency
GHz
1.800
1.900
2.000
Z Source
R
jX
18.8
3.0
18.1
5.3
18.1
9.3
Z Load
R
jX
5.8
22.0
8.6
22.4
5.0
21.6
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: [phone]
5/19/98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [e-mail]
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20146 Uen Rev. D 09-28-98