PTB20146 Datasheet, PDF (1/2 Pages) Ericsson – 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor

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PTB 20146
0.4 Watt, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20146 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
1.0
V_CC = 26 V
0.8 I_CQ = 140 mA
f = 2.0 GHz
0.6
0.4
0.2
0.0
0.00
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
1
9/28/98
• 0.4 Watt, 1.8–2.0 GHz
• Class A Characteristics
• Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
20146 _{LOT CODE}
Package 20208
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
0.5
5.4
0.031
–40 to +150
32.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W