PTB20125 Datasheet, PDF (2/5 Pages) Ericsson – 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

PTB 20125
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
V_BE = 0 V, I_C = 100 mA
I_C = 0 A, I_E = 20 mA
V_CE = 10 V, I_C = 1.5 A
Symbol
V_(BR)CES
V_(BR)EBO
h_FE
Min
55
4.0
30
RF Specifications (100% Tested)
Characteristic
Symbol
Gain
(V_CC = 26 Vdc, Pout = 40 W(PEP), I_CQ = 2 x 100 mA, f = 2 GHz)
G_pe
Collector Efficiency
(V_CC = 26 Vdc, Pout = 100 W, I_CQ = 2 x 100 mA, f = 2 GHz)
η_C
Load Mismatch Tolerance
(V_CC = 26 Vdc, Pout = 100 W(PEP), I_CQ = 2 x 100 mA, f = 2 GHz
Ψ
—at all phase angles)
Min
7.0
40
—
Typical Performance
e
Typ Max Units
—
—
Volts
5.0
—
Volts
50
120
—
Typ Max Units
8.0
—
dB
45
—
%
—
5:1
—
Broadband Test Fixture Performance
10
60
Gain (dB)
8
50
40
6
V_CC = 26 V ^{Efficiency (%)}
I_CQ = 200 mA
- 350
4
Pout = 50 W
-1250
2
0
1900
-2150
Return Loss (dB)
-305
1925
1950
1975
Frequency (MHz)
2000
Output Power vs. Supply Voltage
140
130
120
110
100
90
I_CQ = 200 mA
80
f = 2000 MHz
70
22
23
24
25
26
27
Supply Voltage (Volts)
2