PTB20125 Datasheet, PDF (1/5 Pages) Ericsson – 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

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PTB 20125
100 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20125 is an NPN, push-pull RF power transistor intended for 26
Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in CDMA or TDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
• 100 Watts, 1.8–2.0 GHz
• Class AB Characteristics
• 40% Collector Efficiency at 100 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
Output Power (W) ¹⁴⁰
11
120
10
V_CC = 26 V
100
9 _{ICQ = 200 mA}
8
80
7
Gain (dB)
60
6
5
1750
1800
1850
1900
40
Efficiency (%)
20
1950 2000 2050
Frequency (MHz)
20125 _{LOT CODE}
Package 20225 *
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
55
55
4.0
14
400
2.3
–40 to +150
0.44
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
* This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications.
1
5/19/98