PTB20031 Datasheet, PDF (2/2 Pages) Ericsson – 40 Watts, 420-470 MHz RF Power Transistor

PTB 20031
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
I_B = 0 A, I_C = 100 mA
V_BE = 0 V, I_C = 100 mA
I_C = 0 A, I_E = 5 mA
V_CE = 5 V, I_C = 1 A
Symbol
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
h_FE
Min
25
50
3.5
20
RF Specifications (100% Tested)
Characteristic
Symbol
Gain
(V_CC = 24 Vdc, Pout = 40 W, I_CQ = 200 mA, f = 420–470 MHz)
G_pe
Collector Efficiency
(V_CC = 24 Vdc, Pout = 40 W, I_CQ = 200 mA, f = 420–470 MHz)
η_C
Intermodulation Distortion
(V_CC = 24 Vdc, Pout = 40 W(PEP), I_CQ = 200 mA, f₁ = 469 MHz, IMD
f₂ = 470 MHz)
Load Mismatch Tolerance
(V_CC = 24 Vdc, Pout = 40 W, I_CQ = 200 mA, f = 420–470 MHz
Ψ
—all phase angles at frequency of test)
Min
8.0
50
—
—
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
12
80
11
10
9
8
7
6
410
Efficiency (%)
70
60
Gain (dB)
50
V_CC = 24 V
40
I_CQ = 200 mA
Pout = 30 W
30
420 430 440 450 460
Frequency (MHz)
20
470
e
Typ Max Units
30
—
Volts
70
—
Volts
5
—
Volts
50
120
—
Typ Max Units
9.5
—
dB
—
—
%
-22
—
dBc
—
5:1
—
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: [phone]
9/23/98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [e-mail]
www.ericsson.com/rfpower
2
Specifications subject to change
without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98