PTB20031 Datasheet, PDF (1/2 Pages) Ericsson – 40 Watts, 420-470 MHz RF Power Transistor

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PTB 20031
40 Watts, 420–470 MHz
RF Power Transistor
Description
The 20031 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40
watts minimum output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
60
50
40
30
20
10
0
0
V_CC = 24 V
I_CQ = 200 mA
f = 470 MHz
2
4
6
8
10
Input Power (Watts)
• 40 Watts, 420–470 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 40 Watts
• Gold Metallization
• Silicon Nitride Passivated
20031 _{LOT CODE}
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
10.0
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/23/98