PTB20193 Datasheet, PDF (1/3 Pages) Ericsson – 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor

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PTB 20193
60 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
Description
The 20193 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
70
60
50
40
30
20
10
1
V_CC = 26 V
I_CQ = 150 mA
f = 1.9 GHz
3
5
7
9
11
13
Input Power (Watts)
• 60 Watts, 1.8–1.9 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
20193 _{LOT CODE}
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
Symbol
V_CER
V_CES
V_EBO
I_C
P_D
T_STG
R_θJC
Value
55
55
4.0
8
233
1.33
–40 to +150
0.75
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
°C/W
1
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