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EN25Q64_11 Datasheet, PDF (60/60 Pages) Eon Silicon Solution Inc. – 64 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
Revisions List
EN25Q64
Revision No Description
Date
1. Add 8-pin PDIP package option
2. Add 24-ball Ball Grid Array (6 x 8 mm) package option
F
3. For the dual and quad SPI, change the speed from 50MHz to 80MHz. 2010/02/05
4. Remove Write Suspend and Write Resume information.
5. Modify Software Reset Latency from 20µs to 28µs on page 47.
1. Update AC Characteristics in Table 11 on page 47.
G
(1). Sector Erase time from 0.09s to 0.06s (typ.)
2010/04/19
(2). Block Erase time from 0.5s to 0.3s (typ.)
1. Rename 38h command from Enable Quad I/O (EQIO) to Enable Quad
H
Peripheral Interface mode (EQPI).
2. Revise the speed of Quad SPI from 80MHz to 50MHz.
2011/01/10
3. Revise the Chip Erase Time (Max.) from 50s to 70s on page47.
1. Update Write Status Register Cycle Time from 10 (typ.) /15 (max.) ms to 15
I
(typ.) / 50 (max.) ms on page 47.
2011/04/18
2. Rename 24 Ball package from BGA to TFBGA.
1. Add the note “5. This flow cannot release the device from Deep power
J
down mode.” on page 19.
2011/07/07
2. Correct the typo of 6 dummy clocks for EBh command on page 28.
This Data Sheet may be revised by subsequent versions
60
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. J, Issue Date: 2011/07/07
www.eonssi.com