EN29GL256H Datasheet, PDF (51/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
EN29GL256H/L
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Total Write Buffer time
ACC Total Write Buffer time
Erase/Program Endurance
Typ
0.1
60
8
8
268.8
134.4
160
60
100K
Limits
Max
2
240
200
200
806.4
403.2
Comments
Unit
sec
Excludes 00h programming prior
to erasure
sec
µs
µs
sec
Excludes system level overhead
µs
cycles
Minimum 100K cycles
Notes:
1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard
pattern programmed.
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
C_IN
Input Capacitance
V_IN = 0
6
7.5
C_OUT
Output Capacitance
V_OUT = 0
8.5
12
C_IN2
Control Pin Capacitance
V_IN = 0
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
7.5
9
Unit
pF
pF
pF
Table 24. DATA RETENTION
Parameter Description
Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions
51
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. G, Issue Date: 2011/01/17
www.eonssi.com