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EN29GL256H Datasheet, PDF (5/57 Pages) Eon Silicon Solution Inc. – 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
EN29GL256H/L
Table 2. PRODUCT SELECTOR GUIDE
Product Number
Speed Option
Full Voltage Range: Vcc=2.7 – 3.6 V
VIO=1.65 – 3.6 V
Max Access Time, ns (tacc)
Max Page Read Access, ns(tpacc)
Max CE# Access, ns (tce)
Max OE# Access, ns (toe)
EN29GL256
-90
90
25
90
35
BLOCK DIAGRAM
Vcc
RY/BY#
Vss
VIO
WE #
State
Co ntrol
Command
Register
CE#
OE #
Blo ck Protect Switches
Erase Voltage Gen erator
Program Voltage
G ene ra tor
Chip Enable
Output Enable
Logic
DQ0-DQ15 (A-1)
Inp ut/Output Buffers
STB
Data Latch
Vcc Detector
A0-A23
Timer
Y-D ec oder
STB
X-D ec oder
Y-G ating
Cell Matrix
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. G, Issue Date: 2011/01/17
www.eonssi.com