EN25S10 Datasheet, PDF (5/34 Pages) Eon Silicon Solution Inc. – 1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S10
MEMORY ORGANIZATION
The memory is organized as:
z 131,072 bytes
z Uniform Sector Architecture
4 blocks of 32-Kbyte
32 sectors of 4-Kbyte
z 512 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
3
2
1
0
Sector
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Address range
01F000h
01FFFFh
01E000h
01EFFFh
01D000h
01DFFFh
01C000h
01CFFFh
01B000h
01BFFFh
01A000h
01AFFFh
019000h
019FFFh
018000h
018FFFh
017000h
017FFFh
016000h
016FFFh
015000h
015FFFh
014000h
014FFFh
013000h
013FFFh
012000h
012FFFh
011000h
011FFFh
010000h
010FFFh
00F000h
00FFFFh
00E000h
00EFFFh
00D000h
00DFFFh
00C000h
00CFFFh
00B000h
00BFFFh
00A000h
00AFFFh
009000h
009FFFh
008000h
008FFFh
007000h
007FFFh
006000h
006FFFh
005000h
005FFFh
004000h
004FFFh
003000h
003FFFh
002000h
002FFFh
001000h
001FFFh
000000h
000FFFh
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. F, Issue Date: 2011/11/07
www.eonssi.com