EN25S10 Datasheet, PDF (26/34 Pages) Eon Silicon Solution Inc. – 1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

EN25S10
Table 11. AC Characteristics
(T_a = - 40°C to 85°C; V_CC = 1.65-1.95V)
Symbol Alt
Parameter
Min Typ
Max
Serial Clock Frequency for:
F_R
f_C
FAST_READ, PP, SE, BE, DP, RES, WREN,
D.C.
75
WRDI, WRSR
f_R
Serial Clock Frequency for READ, RDSR, RDID D.C.
33
t_CLH ¹
Serial Clock High Time
6
t_CLL1
Serial Clock Low Time
6
t_CLCH2
Serial Clock Rise Time (Slew Rate)
0.1
t_CHCL ²
Serial Clock Fall Time (Slew Rate)
0.1
t_SLCH
t_CSS
CS# Active Setup Time
5
t_CHSH
CS# Active Hold Time
5
t_SHCH
CS# Not Active Setup Time
5
t_CHSL
CS# Not Active Hold Time
5
t_SHSL
t_CSH
CS# High Time
100
t_SHQZ ²
t_DIS
Output Disable Time
6
t_CLQX
t_HO
Output Hold Time
0
t_DVCH
t_DSU
Data In Setup Time
2
t_CHDX
t_DH
Data In Hold Time
5
t_HLCH
HOLD# Low Setup Time ( relative to CLK )
5
t_HHCH
HOLD# High Setup Time ( relative to CLK )
5
t_CHHH
HOLD# Low Hold Time ( relative to CLK )
5
t_CHHL
HOLD# High Hold Time ( relative to CLK )
5
t_HLQZ ²
t_HZ
HOLD# Low to High-Z Output
6
t_HHQX ²
t_LZ
HOLD# High to Low-Z Output
6
t_CLQV
t_V
Output Valid from CLK
9
t_WHSL3
Write Protect Setup Time before CS# Low
20
t_SHWL3
Write Protect Hold Time after CS# High
100
t_DP ²
CS# High to Deep Power-down Mode
3
t_RES1 ²
CS# High to Standby Mode without Electronic
Signature read
3
t_RES2 ²
CS# High to Standby Mode with Electronic
Signature read
1.8
t_W
Write Status Register Cycle Time
10
15
t_PP
Page Programming Time
1.5
5
t_SE
Sector Erase Time
0.09
0.3
t_BE
Block Erase Time
0.3
1.2
t_CE
Chip Erase Time
1
3
Note: 1. t_CH + t_CL must be greater than or equal to 1/ f_C
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
Unit
MHz
MHz
ns
ns
V / ns
V / ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ms
ms
s
s
s
This Data Sheet may be revised by subsequent versions
26
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. F, Issue Date: 2011/11/07
www.eonssi.com