EN25LF20_1 Datasheet, PDF (5/32 Pages) Eon Silicon Solution Inc. – 2 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

MEMORY ORGANIZATION
The memory is organized as:
262,144 bytes
Uniform Sector Architecture
4 blocks of 64-Kbyte
64 sectors of 4-Kbyte
1024 pages (256 bytes each)
EN25LF20
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
3
2
1
0
Sector
63
62
61
60
59
48
47
32
31
16
15
4
3
2
1
0
03F000h
03E000h
03D000h
03C000h
03B000h
Address range
03FFFFh
03EFFFh
03DFFFh
03CFFFh
03BFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
010FFFh
00FFFFh
004000h
003000h
002000h
001000h
000000h
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh
OPERATING FEATURES
SPI Modes
The EN25LF20 is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation
Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as
shown in Figure 3, concerns the normal state of the CLK signal when the SPI bus master is in standby
and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For
Mode 3 the CLK signal is normally high. In either case data input on the DI pin is sampled on the rising
edge of the CLK. Data output on the DO pin is clocked out on the falling edge of CLK.
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2010/05/31
www.eonssi.com