EN25LF20_1 Datasheet, PDF (2/32 Pages) Eon Silicon Solution Inc. – 2 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

EN25LF20
EN25LF20
2 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 2.35-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 2 Mbit Serial Flash
- 2 M-bit/256 K-byte/1024 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
• Low power consumption
- 12 mA typical active current
- 1 µA typical power down current
• Uniform Sector Architecture:
- 64 sectors of 4-Kbyte
- 4 blocks of 64-Kbyte
- Any sector or block can be
erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
- Chip erase time: 3 Seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25LF20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256
bytes at a time, using the Page Program instruction.
The EN25LF20 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25LF20 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2010/05/31
www.eonssi.com