EN71SN10E Datasheet, PDF (45/87 Pages) Eon Silicon Solution Inc. – 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package

DC Characteristics
Recommended operating condition (Voltage reference to V_SS = 0V)
Parameter Symbol
Test Condition
Operating Current
(One Bank Active)
I_DD0
Precharge Standby
Current in power-
down mode
I_DD2P
I_DD2PS
Precharge Standby
Current in non
power-down mode
I_DD2N
I_DD2NS
Active Standby
Current in power-
down mode
I_DD3P
I_DD3PS
Active Standby
Current in non
power-down mode
(One Bank Active)
I_DD3N
I_DD3NS
Operating Current
(Burst Mode)
I_DD4R
I_DD4W
Auto Refresh
Current
I_DD5
I_DD5A
t_RC= t_RC (min); t_CK = t_CK (min); CKE = HIGH; CS# =
HIGH between valid commands; address inputs are
SWITCHING; data input signals are STABLE
All banks idle, CKE = LOW; CS# = HIGH, t_CK = t_CK
(min); address & control inputs are SWITCHING;
data input signals are STABLE
All banks idle, CKE = LOW; CS# = HIGH, CLK =
LOW, CLK# = HIGH; address & control inputs are
SWITCHING; data input signals are STABLE
All banks idle, CKE = HIGH; CS# = HIGH, t_CK = t_CK
(min); address & control inputs are SWITCHING;
data input signals are STABLE
All banks idle, CKE = HIGH; CS# = HIGH, CLK =
LOW, CLK# = HIGH; address & control inputs are
SWITCHING; data input signals are STABLE
One bank active, CKE = LOW; CS# = HIGH, t_CK =
t_CK (min); address & control inputs are SWITCHING;
data input signals are STABLE
One bank active, CKE = LOW; CS# = HIGH, CLK =
LOW, CLK# = HIGH; address & control inputs are
SWITCHING; data input signals are STABLE
One bank active, CKE = HIGH, CS# = HIGH, t_CK =
t_CK (min); address & control inputs are SWITCHING;
data input signals are STABLE
One bank active, CKE = HIGH; CS# = HIGH, CLK=
LOW, CLK# = HIGH; address & control inputs are
SWITCHING; data input signals are STABLE
One bank active; BL=4; CL=3; t_CK = t_CK (min);
continuous read bursts; I_OUT = 0 mA; address inputs
are SWITCHING; 50% data changing each burst
One bank active; BL=4; t_CK = t_CK (min); continuous
write bursts; I_OUT = 0 mA; address inputs are
SWITCHING; 50% data changing each burst
Burst refresh; t_CK = t_CK (min); CKE
= HIGH; address inputs are
SWITCHING; data input signals
are STABLE
t_RFC= t_RFC(min)
t_RFC= t_REFI
EN71SN10E
Version
Unit
-5
35
mA
300
μA
300
μA
9
mA
2
mA
2
mA
2
mA
25
mA
2
mA
100
mA
100
mA
60
mA
9
mA
This Data Sheet may be revised by subsequent versions
45
or modifications due to changes in technical specifications.
©2012 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2012/12/07