EN25F40_1 Datasheet, PDF (35/35 Pages) Eon Silicon Solution Inc. – 4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

Revisions List
EN25F40
Revision No Description
Date
A
Initial release
2007/01/19
1. Add 8 Lead PDIP in Figure 1. Connection Diagram on page 2
2. _{Change Table 7. Write Inhibit Voltage (Max) from 2V to 2.5V}
on page 21
B
3. _{Change Table 8. DC Characteristics VIL Max 0.3 VCC to 0.2 VCC on page} 2007/05/09
22
4. Change Table 10. 100MHz AC Characteristics t_CLQV from 6 ns to 8 ns on
page 23
1.Update the Table 6. Status Register Bit Locations on page 10.
2. Modify the Figure 17 on page 18 for the starting point of ^tRES2
3. Modify the Figure 18 on page 19
(1) revise the manufacture ID to 1Ch
C
(2) the number of clock count to cover the manufacture ID should be 31 to _2007/11/23
38 and the last clock to clock out device ID is
46.
4. Modify the Figure 19 in page 20, the clock count to cover the device ID
should be from 15 to 31
5. Update the Figure 26. SOP 8 (150 mil) package drawing on page 28
1. Add Eon products’ New top marking “cFeon“ information on page 1.
2. Add the description “Serial Interface Architecture “and modify active
current (typical) from 5mA to 12mA on page 2.
3. List the Note 4 for 90h command in Table 4 on page 10.
4. Update Table 6. Status Register Bit Locations on page 11.
5. Add Table 7. OTP Sector Address on page 22.
6. Add Note “ Vcc (max) is 3.6V and Vcc (min) is 2.7V “ in Table 8 on page
23.
D
7. Modify ICC3 from “Q = open” to “ DQ = open “ in Table 9 on page 24
2008/12/18
8. Correct the typo “tCLH to tCH” “tCLL to tCL” ”tHHQZ to tHHQX” in
Table 11 and Table 12 on page 25 and 26.
9. Modify Storage Temperature from “-65 to + 125” to “-65 to +150” on page
28
10.Delete Latch up Characteristics Table from version C.
11.Modify official name from 209mil to 208mil and delete dimension
“ c “ in Figure 27 on page 31.
12. Modify Figure 28. VDFN8 ( 5x6mm ) dimension A from 0.80 to 0.75
on page 32.
E
Remove the Protected Area Sizes definition of BP2
110 in table 3 on page 8.
BP1 and BP0 = 001 to
2009/03/10
1. Update Page program, Sector, Block and Chip erase time (typ.)
parameter on page 2 and 25.
(1). Page program: from 1.5ms to 1.3ms
(2). Sector erase: from 0.15s to 0.09s
(3). Block erase: from 0.8s to 0.5s
F
(4). Chip erase: from 5s to 3.5s
2009/07/07
2. Update the Protected Area Sizes definition of BP2 BP1 and BP0
in table 3 on page 8.
3. Add the description of OTP erase command on page 9 and page 22.
4. Remove the Block Erase “52h” command on page 9, 16 and 17.
5. Remove the speed option of 75MHz from version E.
G
Modify Table 9. DC Characteristics ICC1 (Standby) and ICC2 (Deep Power- _2009/10/16
down) Current from 5µA to 20µA on page 24.
1. Change the full voltage from 2.7 ~ 3.6V to 2.3 ~ 3.6V
H
2. Modify Icc4, Icc5, Icc6 and Icc7 current on page 24.
2010/02/25
3. Add the 75MHz AC Characteristics (V_CC = 2.3 ~ 3.6V) table on page 26.
I
Modify D2 of VDFN8(5x6) from 4.23 to 3.40 on page 32.
2010/05/31
This Data Sheet may be revised by subsequent versions
35
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2010/05/31
www.eonssi.com