EN25F40_1 Datasheet, PDF (10/35 Pages) Eon Silicon Solution Inc. – 4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector

EN25F40
Read Identification 9Fh
Enter OTP mode
3Ah
(M7-M0) (ID15-ID8) (ID7-ID0) (5)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from the
device on the DO pin.
2. The Status Register contents will repeat continuously until CS# terminate the instruction.
3. The Device ID will repeat continuously until CS# terminate the instruction.
4. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
5. (M7-M0) : Manufacturer, (ID15-ID8) : Memory Type, (ID7-ID0) : Memory Capacity
Table 5. Manufacturer and Device Identification
OP Code
ABh
90h
9Fh
(M7-M0)
1Ch
1Ch
(ID15-ID0)
3113h
(ID7-ID0)
12h
12h
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase
(BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the
instruction code, and then driving Chip Select (CS#) High.
Figure 5. Write Enable Instruction Sequence Diagram
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write
Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.
This Data Sheet may be revised by subsequent versions
10
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. I, Issue Date: 2010/05/31
www.eonssi.com