EN25P10 Datasheet, PDF (31/31 Pages) Eon Silicon Solution Inc. – 1 Mbit Uniform Sector, Serial Flash Memory

Revisions List
EN25P10
Revision No Description
A
Initial release
B
1. _{Change clock rate from 50MHz to 75MHz,}
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 150 ms typical to 500 ms
in page 1
2. Change Table 8 DC Characteristics in page 21
(1) Add ICC3 for 75MHz
3. Change Table 10 to 75MHz AC Characteristics in page 22
(1) Change F_R from 50 to 75MHz
(2) Change f_R from 33 to 50MHz
(3) Change t_CLH from 9ns to 6ns
(4) Change t_CLL from 9ns to 6ns
(5) Change t_SHQZ from 9ns to 6ns
(6) Change t_HLQZ from 9ns to 6ns
(7) Change t_HHQZ from 9ns to 6ns
(8) Change t_CLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
Date
2006/04/27
2006/12/27
4. Add Table 11: 50MHz AC Characteristics in page 23
(1) Change Page program time 1.4ms typical to 1.5ms
5. Add 75MHz option in Ordering Information in page 29
6. _{Add Package Power Dissipation Capability ( TA = 25 ℃ ) =}
1.0 W in page 25
C
1. Change clock rate from 75MHz to 100MHz in page 1
2007/5/4
2. _{Change Table 7 Write Inhibit Voltage (Max) from 2V to 2.5V}
in page 20
3. ^{Add Table 10: 100MHz AC Characteristics in page 22}
4. Add 100MHz option in Ordering Information in page 30
This Data Sheet may be revised by subsequent versions ₃₁ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/5/4