EN25P10 Datasheet, PDF (20/31 Pages) Eon Silicon Solution Inc. – 1 Mbit Uniform Sector, Serial Flash Memory

Power-up Timing
EN25P10
Figure 19. Power-up Timing
Table 7. Power-Up Timing and Write Inhibit Threshold
Symbol
tVSL(1)
tPUW(1)
VWI(1)
Parameter
VCC(min) to CS# low
Time delay to Write instruction
Write Inhibit Voltage
Min.
10
1
1
Max. Unit
µs
10
ms
2.5
V
Note:
1.The parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The
Status Register contains 00h (all Status Register bits are 0).
This Data Sheet may be revised by subsequent versions ₂₀ ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/5/4