EN71SN10F Datasheet, PDF(24/97 Page) Eon Silicon Solution Inc. – 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package

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EN71SN10F Datasheet, PDF (24/97 Pages) Eon Silicon Solution Inc. – 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package

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Serial access Cycle after Read (CLE = L, WE# = H, ALE = L)

EN71SN10F

Note:

1. Dout transition is measured at Â±200mV from steady state voltage at I/O with load.

2. tRHOH starts to be valid when frequency is lower than 20MHz.

Serial access Cycle after Read (EDO Type CLE = L, WE# = H, ALE = L)

Note:

1. Transition is measured at Â±200mV from steady state voltage with load.

2. This parameter is sampled and not 100% tested.

3. tRLOH is valid when frequency is higher than 20MHz.

4. tRHOH starts to be valid when frequency is lower than 20MHz.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2013/10/22

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