EN25QH16A Datasheet, PDF (24/66 Pages) Eon Silicon Solution Inc. – 16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

EN25QH16A
Read Data Bytes (READ) (03h)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial
Data Output (DO), each bit being shifted out, at a maximum frequency fR, during the falling edge of
Serial Clock (CLK).
The instruction sequence is shown in Figure 12. The first byte addresses can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out.
The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When
the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select
(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 12. Read Data Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2013/11/25
www.eonssi.com