EN25P64 Datasheet, PDF (11/34 Pages) Eon Silicon Solution Inc. – 64 Megabit Uniform Sector, Serial Flash Memory

EN25P64
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is
driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first,
on Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by
both or none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has
been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed
(Fast_Read), Read Status Register (RDSR) or Release from Deep Power-down, and Read Device ID
(RDI) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip Select
(CS#) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status Register
(WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, Chip
Select (CS#) must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and
is not executed. That is, Chip Select (CS#) must driven High when the number of clock pulses after
Chip Select (CS#) being driven Low is an exact multiple of eight. For Page Program, if at any time the
input byte is not a full byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1
data byte), it will be ignored too. In the case of SE, exact 24-bit address is a must, any less or
more will cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
Table 4. Instruction Set
Instruction Name Byte 1
Code
Byte 2
Byte 3
Byte 4 Byte 5 Byte 6
n-Bytes
Write Enable
06h
Write Disable
Read Status
Register
Write Status
Register
Read Data
Fast Read
04h
05h
(S7-S0)(1)
01h
S7-S0
continuous(2)
03h
A23-A16 A15-A8
A7-A0
(D7-D0) (Next byte)
continuous
0Bh
A23-A16 A15-A8
A7-A0
dummy (D7-D0)
(Next Byte)
continuous
Page Program
02h
A23-A16 A15-A8
A7-A0
D7-D0
Next byte
continuous
Sector Erase
D8h
A23-A16 A15-A8
A7-A0
Bulk Erase
C7h
Deep Power-down B9h
Release from
(3)
Deep Power-down,
dummy
dummy dummy (ID7-ID0)
and read Device ID ABh
Release from
Deep Power-down
This Data Sheet may be revised by subsequent versions
11
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. D, Issue Date: 2009/1/8
www.eonssi.com.