EMLS232UA Datasheet, PDF (4/14 Pages) Emerging Memory & Logic Solutions Inc – 512K x 32 x 4Banks Low Power SDRAM Specificaton

EMLS232UA Series
512K x 32 x 4Banks Low Power SDRAM
PAD FUNCTION DESCRIPTION
Pad
Name
Input Function
CLK
System clock
Active on the positive going edge to sample all inputs.
CS
Chip select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A₀ ~ A₁₀
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA₀ ~ RA₁₀,
Column address : CA₀ ~ CA₇
BA₀ ~ BA₁
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0~DQM3
Data input/output mask
Makes data output Hi-Z, t_SHZ after the clock and masks the output.
Blocks data input when DQM active.
DQ_{0 ~ n}
Data input/output
Data inputs/outputs are multiplexed on the same pins.: DQ_{0 ~ 31}
V_DD/V_SS
Power supply/ground
Power and ground for the input buffers and the core logic.
V_DDQ/V_SSQ
Data output power/ground Isolated power supply and ground for the output buffers to provide improved
noise immunity
N.C/RFU
No connection
/reserved for future use
This pin is recommended to be left No Connection on the device.
Rev 0.6