EMP216MEAF Datasheet, PDF (13/15 Pages) Emerging Memory & Logic Solutions Inc – 2Mx16 Pseudo Static RAM

Preliminary
EMP216MEAF Series
2Mx16 Pseudo Static RAM
Address Information for PASR mode and RMS mode
Partial Array Self Refresh Mode (A3=0, A4=1)
A2
A1
A0
Refresh Section
Address
0
1
1
1/4
000000h~07FFFFh
0
1
0
1/2
000000h~0FFFFFh
X
0
0
Full
000000h~1FFFFFh
1
1
1
1/4
180000h~1FFFFFh
1
1
0
1/2
100000h~1FFFFFh
Size
512Kb x 16
1Mb x 16
2Mb x 16
512Kb x 16
1Mb x 16
Density
8Mb
16Mb
32Mb
8Mb
16Mb
Reduced Memory Size Mode (A3=1, A4=1)
A2
A1
A0
Refresh Section
0
1
1
1/4
0
1
0
1/2
1
1
1
1/4
1
1
0
1/2
Address
000000h~07FFFFh
000000h~0FFFFFh
180000h~1FFFFFh
100000h~1FFFFFh
Size
512Kb x 16
1Mb x 16
512Kb x 16
1Mb x 16
Density
8Mb
16Mb
8Mb
16Mb
Low Power Mode Characteristics
Parameter
Symbol
Test Conditions
Array
Min Typ Max Unit
Deep Power Down Current
I_ZZ
No Refresh
-
Partial Array Refresh Mode
I_ZZa
ZZ# < 0.2V, Other inputs = 0 ~ V_CCQ
(Max. condition : V_CC=3.3V @ 85^oC)
1/4 Array
-
Standby Current
I_ZZb
1/2 Array
-
-
10
uA
-
65
uA
-
75
uA
Reduced Memory Size
I_{SB1a RMS mode. Other inputs = 0 ~ VCCQ}
1/4 Array
-
Mode Standby Current
I_SB1b ^{(Max. condition : V}CC^{=3.3V @ 85oC)} 1/2 Array
-
-
65
uA
-
75
uA
¢
Rev 0.0