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MC-4R512FKE6D-840 Datasheet, PDF (9/14 Pages) Elpida Memory – Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT) | |||
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MC-4R512FKE6D-840
AC Electrical Specifications
Symbol
Parameter and Conditions
MIN. TYP. MAX. Unit
Z
Module Impedance of RSL signals
25.2 28.0 30.8 â¦
Module Impedance of SCK and CMD signals
23.8 28.0 32.2
TPD
Average clock delay from finger to finger of all RSL clock nets
2.11 ns
(CTM, CTMN,CFM, and CFMN)
âTPD
Propagation delay variation of RSL signals with respect to TPD Note1,2
â24
+24 ps
âTPD-CMOS
Propagation delay variation of SCK signal with respect to an average clock
delay Note1
âTPD- SCK,CMD Propagation delay variation of CMD signal with respect to SCK signal
â250
â200
+250 ps
+200 ps
Vα/VIN
Attenuation Limit
25.0 %
VXF/VIN
VXB/VIN
RDC
Forward crosstalk coefficient
(300ps input rise time 20% - 80%)
Backward crosstalk coefficient
(300ps input rise time 20% - 80%)
DC Resistance Limit
8.0
%
2.5
%
1.2
â¦
Notes 1. TPD or Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM, and CFMN).
2. If the RIMM module meets the following specification, then it is compliant to the specification.
If the RIMM module does not meet these specifications, then the specification can be adjusted by the
âAdjusted âTPD Specificationâ table.
Adjusted âTPD Specification
Symbol
Parameter and conditions
Adjusted MIN./MAX.
Absolute
Unit
MIN. MAX.
âTPD Propagation delay variation of RSL signals with respect to TPD +/â [24+(18*N*âZ0)] Note â50
50
ps
Note N = Number of RDRAM devices installed on the RIMM module.
âZ0 = delta Z0% = (MAX. Z0 â MIN. Z0) / (MIN. Z0)
(MAX. Z0 and MIN. Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers
on the module.)
Data Sheet E0263N10 (Ver 1.0)
9
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