MC-4R512FKE6D-840 Datasheet, PDF (10/14 Pages) Elpida Memory – Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)

MC-4R512FKE6D-840
RIMM Module Current Profile
IDD
IDD1
IDD2
IDD3
IDD4
RIMM module power conditions ^Note1
One RDRAM in Read ^Note2, balance in NAP mode
One RDRAM in Read ^Note2, balance in Standby mode
One RDRAM in Read ^Note2, balance in Active mode
One RDRAM in Write, balance in NAP mode
MAX.
Unit
768
mA
2055
mA
2730
mA
828
mA
IDD5
One RDRAM in Write, balance in Standby mode
2115
mA
IDD6
One RDRAM in Write, balance in Active mode
2790
mA
Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Power does not include Refresh Current.
2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the
following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.
10
Data Sheet E0263N10 (Ver 1.0)