MC-4R128FKK6K Datasheet, PDF (8/13 Pages) Elpida Memory – 128MB 32-bit Direct Rambus DRAM RIMM Module

MC-4R128FKK6K
Electrical Specifications
Absolute Maximum Ratings
Symbol
VI,ABS
VDD,ABS
TSTORE
Parameter
Voltage applied to any RSL or CMOS signal pad with
respect to GND
Voltage on VDD with respect to GND
Storage temperature
MIN.
−0.3
−0.5
−50
MAX.
Unit
VDD + 0.3
V
VDD + 1.0
V
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
MIN.
MAX.
Unit
VDD
VCMOS
VREF
Supply voltage^Note
CMOS I/O power supply at pad
2.5V controllers
1.8V controllers
Reference voltage^Note
2.50 − 0.13
2.50 + 0.13
V
VDD
VDD
V
1.8 − 0.1
1.8 + 0.2
1.4 − 0.2
1.4 + 0.2
V
SVDD
Serial Presence Detector- positive power supply 2.2
3.6
V
VTERM
Termination Voltage
1.89 − 0.09
1.89 + 0.09
V
Note: See Direct RDRAM datasheet for more details.
Preliminary Data Sheet E0269N10 (Ver. 1.0)
8