EDK1216CFBJ Datasheet, PDF (8/56 Pages) Elpida Memory – 128M bits DDR Mobile RAM™

EDK1216CFBJ
Test Conditions
Parameter
Input high voltage
Input low voltage
Input differential voltage, CK and /CK inputs
Input differential cross point voltage,
CK and /CK inputs
Input signal slew rate
Output load
Note: 1. VDD = VDDQ
tCK
tCH
tCL
/CK
CK
Symbol
VIH (AC)
VIL (AC)
VID (AC)
VIX (AC)
SLEW
CL
VID
VIX
Value
0.8 × VDDQ
0.2 × VDDQ
1.4
VDDQ/2 with VDD=VDDQ
1
20
Unit
V
V
V
V
V/ns
pF
DQOUT
(DQOUT)
tLZ
tAC
Q1
Q2
VDDQ/2
T
slew rate = ^{(VIH − VIL)}
T
Test Condition (Wave form and Timing Reference)
Note
1
1
1
1
VIH
VIL
DQ
CL
Output Load
Preliminary Data Sheet E1194E20 (Ver. 2.0)
8