EDS6416AHBH Datasheet, PDF (6/49 Pages) Elpida Memory – 64M bits SDRAM (4M words x 16 bits)

EDS6416AHBH, EDS6416CHBH
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) [EDS6416AH]
(TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [EDS6416CH]
[EDS6416AH]
Parameter
Symbol min.
max.
Unit Test condition
Note
Input leakage current
ILI
–1
1
µA 0 ≤ VIN ≤ VDD
Output leakage current
ILO
–1.5
1.5
µA 0 ≤ VOUT ≤ VDD, DQ = disable
Output high voltage
VOH
2.4
—
V
IOH = –2 mA
Output low voltage
VOL
—
0.4
V
IOL = 2 mA
[EDS6416CH]
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol min.
ILI
–1
ILO
–1.5
VOH
2.0
VOL
—
max.
1
1.5
—
0.4
Unit Test condition
Note
µA 0 ≤ VIN ≤ VDD
µA 0 ≤ VOUT ≤ VDD, DQ = disable
V
IOH = –1 mA
V
IOL = 1 mA
Pin Capacitance (TA = 25°C, VDD, VDDQ = 3.3V ± 0.3V) [EDS6416AH]
(TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V) [EDS6416CH]
Parameter
Symbol Pins
min.
typ.
max.
Unit
Notes
Input capacitance
CI1
CLK
1.5
—
3.5
pF
1, 2, 4
Data input/output
capacitance
Address, CKE, /CS,
CI2
/RAS, /CAS, /WE, 1.5
—
DQM
CI/O
DQ
3.0
—
3.8
pF
1, 2, 4
6.5
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 1.4V(EDS6416AHBH) and 1.2V (EDS6416CHBH) bias, 200mV swing.
3. DQM = VIH to disable DOUT.
4. This parameter is sampled and not 100% tested.
Data Sheet E0442E40 (Ver. 4.0)
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