MC-4532CD646 Datasheet, PDF (5/16 Pages) NEC – 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-4532CD646
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
E_{Voltage on power supply pin relative to GND VCC}
Voltage on input pin relative to GND
VT
Short circuit output current
IO
Power dissipation
PD
O_{Operating ambient temperature}
TA
Storage temperature
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
16
W
0 to +70
°C
–55 to +125
°C
L ^{Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause}
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
P _Parameter
Supply voltage
High level input voltage
r ^{Low level input voltage}
Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
−0.3
0
TYP. MAX. Unit
3.3
3.6
V
VCC + 0.3
V
+0.8
V
70
°C
o _{Capacitance (TA = 25 °C, f = 1 MHz)}
Parameter
d _{Input capacitance}
uct _{Data input/output capacitance}
Symbol
Test condition
MIN. TYP. MAX. Unit
CI1 A0 - A11, BA0 (A13), BA1 (A12),
56
/RAS, /CAS, /WE
CI2 CLK0 - CLK3
20
94
pF
40
CI3 CKE0, CKE1
28
52
CI4 /CS0 - /CS3
15
29
CI5 DQMB0 - DQMB7
5
17
CI/O DQ0 - DQ63
7
19
pF
Data Sheet E0055N10
5