MC-4532CD646 Datasheet, PDF (1/16 Pages) NEC – 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4532CD646
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
E_Description
The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous
Odynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
L ^{Decoupling capacitors are mounted on power supply line for noise reduction.}
Features
• 33,554,432 words by 64 bits organization
• Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
P _{MC-4532CD646EF-A80}
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
MC-4532CD646EF-A10
CL = 3
100 MHz
6 ns
r^{CL = 2}
77 MHz
7 ns
MC-4532CD646PF-A80
CL = 3
125 MHz
6 ns
CL = 2
100 MHz
6 ns
o _{MC-4532CD646PF-A10}
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
MC-4532CD646XF-A80
CL = 3
125 MHz
6 ns
d _{CL = 2}
100 MHz
6 ns
MC-4532CD646XF-A10
CL = 3
100 MHz
6 ns
CL = 2
77 MHz
7 ns
u ^{• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge}
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
c • Programmable burst-length (1, 2, 4, 8 and full page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
t ^{• Automatic precharge and controlled precharge}
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0055N10 (1st edition)
(Previous No. M13681EJ5V0DS00)
Date Published January 2001 CP (K)
Printed in Japan
This product became EOL in March, 2004.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.