HM5259165B Datasheet, PDF (47/63 Pages) Elpida Memory – 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM

HM5259165B/HM5259805B/HM5259405B-75/A6
DC Characteristics (Ta = 0 to +70˚C, V_CC, V_CCQ = 3.3 V ± 0.3 V, V_SS, V_SSQ = 0 V)
(HM5259805B)
Parameter
Operating current
(CAS latency = 2)
(CAS latency = 3)
Standby current in power
down
Standby current in power
down (input signal stable)
Standby current in non
power down
Standby current in non
power down (input signal
stable)
Active standby current in
power down
Active standby current in
power down (input signal
stable)
Active standby current in
non power down
Active standby current in
non power down (input
signal stable)
Burst operating current
(CAS latency = 2)
(CAS latency = 3)
Refresh current
Self refresh current
Symbol
I _CC1
I _CC1
I _CC2P
I _CC2PS
I _CC2N
I _CC2NS
I _CC3P
I _CC3PS
I _CC3N
I _CC3NS
I _CC4
I _CC4
I _CC5
I _CC6
Input leakage current
I _LI
Output leakage current
I _LO
Output high voltage
V_OH
Output low voltage
V_OL
HM5259805B
-75
-A6
Min Max Min
—
220 —
—
220 —
—
6
—
—
4
—
—
40
—
—
18
—
—
8
—
—
6
—
—
60
—
—
30
—
—
190 —
—
260 —
—
330 —
—
6
—
–1
1
–1
–1.5 1.5 –1.5
2.4 —
2.4
—
0.4 —
Max
190
190
6
4
40
18
8
6
60
30
190
190
330
6
1
1.5
—
0.4
Unit Test conditions
Burst length = 1
mA t_RC = min
mA
mA CKE = V_IL,
t_CK = 12 ns
mA CKE = V_IL, t_CK = ∞
Notes
1, 2, 3
6
7
mA CKE, CS = V_IH,
4
t_CK = 12 ns
mA CKE = V_IH, t_CK = ∞ 9
mA CKE = V_IL,
t_CK = 12 ns
1, 2, 6
mA CKE = V_IL, t_CK = ∞ 2, 7
mA CKE, CS = V_IH,
t_CK = 12 ns
1, 2, 4
mA CKE = V_IH, t_CK = ∞ 2, 9
mA t_CK = min, BL = 4
mA
mA t_RC = min
mA V_IH ≥ V_CC – 0.2 V
V_IL ≤ 0.2 V
µA 0 ≤ Vin ≤ V_CC
µA 0 ≤ Vout ≤ V_CC
DQ = disable
V
I_OH = –4 mA
V
I_OL = 4 mA
1, 2, 5
3
8
Data Sheet E0118H10
47