EDS1232CASE Datasheet, PDF (4/53 Pages) Elpida Memory – 128M bits SDRAM (4M words x 32 bits)

EDS1232CASE
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, execute power up sequence and initialization sequence before proper device operation is achieved
(refer to the Power up sequence).
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
Supply voltage relative to VSS
VT
–0.5 to +3.6
V
VDD, VDDQ
–0.5 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
Storage temperature
TA
0 to +70
°C
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to +70°C)
Parameter
Symbol
min.
typ.
Supply voltage
VDD, VDDQ 2.3
2.5
VSS
0
0
Input high voltage
VIH
1.7

Input low voltage
VIL
–0.3

Notes: 1. VIH (max.) = VDDQ + 1.5V (pulse width ≤ 5ns).
2. VIL (min.) = –1.5V (pulse width ≤ 5ns).
max.
Unit
2.7
V
0
V
VDD + 0.3*¹ V
0.7
V
Notes
Data Sheet E0351E30 (Ver. 3.0)
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