EDD10323BBH-LS Datasheet, PDF (33/60 Pages) Elpida Memory – 1G bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function

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A Write Command to the Consecutive Write Command Interval
Destination row of the consecutive write
command
Bank
address
Row address State
Operation
1. Same
Same
ACTIVE
The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
2. Same
Different —
Precharge the bank to interrupt the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A write command to the
consecutive precharge interval’ section.
3. Different Any
ACTIVE
The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
IDLE
Precharge the bank without interrupting the preceding write operation. tRP after
the precharge command, issue the ACT command. tRCD after the ACT command,
the consecutive write command can be issued.
CK
/CK
Command
Address
BA
t0
tn
tn+1
tn+2
ACT NOP
WRIT WRIT
Row
Column A Column B
tn+3
tn+4
tn+5
NOP
tn+6
DQ
DQS
inA0 inA1 inB0 inB1 inB2 inB3
Column = A
Write
Column = B
Write
Bank0
Active
BL = 4
Bank0
WRITE to WRITE Command Interval (same ROW address in the same bank)
Preliminary Data Sheet E1435E20 (Ver. 2.0)
33