HB54A5129F1 Datasheet, PDF (12/16 Pages) Elpida Memory – 512MB Registered DDR SDRAM DIMM

HB54A5129F1-A75B/B75B/10B
DC Characteristics 1 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol Grade
max.
Unit Test condition
Notes
Operating current (ACTV-PRE) ICC0
Operating current (ACTV-READ-
PRE)
ICC1
Idle power down standby current ICC2P
Idle standby current
Active power down standby
current
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
Auto refresh current
ICC2N
ICC3P
ICC3N
ICC4R
ICC4W
ICC5
Self refresh current
ICC6
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
-A75B
-B75B
-10B
2194
2096
1819
3184
2996
2719
718
656
595
1114
1016
919
844
746
649
1294
1196
1099
4444
4256
4069
4084
3896
3709
4084
3986
3619
448
440
433
mA CKE ≥ VIH, tRC = min. 1, 2, 5
mA
CKE ≥ VIH, BL = 2,
CL = 3.5, tRC = min.
1, 2, 5
mA CKE ≤ VIL
4
mA CKE ≥ VIH, /CS ≥ VIH 4
mA CKE ≤ VIL
3
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = max.
3
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
mA
tRFC = min.,
Input ≤ VIL or ≥ VIH
mA
Input ≥ VCC – 0.2V
Input ≤ 0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
DC Characteristics 2 (TA = 0 to 55°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
max.
Unit
–10
10
µA
–10
10
µA
VTT + 0.76 —
V
—
VTT – 0.76 V
Test condition
VCC ≥ VIN ≥ VSS
VCC ≥ VOUT ≥ VSS
IOH (max.) = –15.2mA
IOL (min.) = 15.2mA
Notes
Data Sheet E0090H40 (Ver. 4.0)
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