EDE2108AEBG Datasheet, PDF (10/73 Pages) Elpida Memory – Lead-free (RoHS compliant) and Halogen-free

EDE2108AEBG
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-800
Parameter
5-5-5
Unit
CL (IDD)
5
tCK
tRCD (IDD)
12.5
ns
tRC (IDD)
57.5
ns
tRRD (IDD)
7.5
ns
tFAW (IDD)
35
ns
tCK (IDD)
2.5
ns
tRAS (min.)(IDD)
45
ns
tRAS (max.)(IDD)
70000
ns
tRP (IDD)
12.5
ns
tRFC (IDD)
195
ns
IDD7 Timing Patterns for 8 Banks
The detailed timings are shown in the IDD7 Timing Patterns for 8 Banks tables.
[8 organization]
Speed bins
Timing Patterns
DDR2-800
A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
Remark: A = Active. RA = Read with auto precharge. D = Deselect
Notes: 1. All banks are being interleaved at minimum tRC (IDD) without violating tRRD (IDD) and tFAW (IDD) using
a Burst length = 4.
2. Control and address bus inputs are STABLE during DESELECTs.
3. IOUT = 0mA.
Data Sheet E1950E11 (Ver.1.1)
10