EDS51321DBH-TS Datasheet, PDF (1/51 Pages) Elpida Memory – 512M bits Mobile RAM™ WTR (Wide Temperature Range)

PRELIMINARY DATA SHEET
512M bits Mobile RAM
WTR (Wide Temperature Range)
EDS51321DBH-TS (16M words × 32 bits)
Specifications
• Density: 512M bits
• Organization
 4M words × 32 bits × 4 banks
• Package: 90-ball FBGA
 Lead-free (RoHS compliant) and Halogen-free
• Power supply: VDD, VDDQ = 1.7V to 1.95V
• Clock frequency: 166MHz/133MHz (max.)
• 2KB page size
 Row address: A0 to A12
 Column address: A0 to A8
• Four internal banks for concurrent operation
• Interface: LVCMOS
• Burst lengths (BL): 1, 2, 4, 8, full page
• Burst type (BT):
 Sequential (1, 2, 4, 8, full page)
 Interleave (1, 2, 4, 8)
• /CAS Latency (CL): 3
• Precharge: auto precharge option for each burst
access
• Driver strength: normal, 1/2, 1/4, 1/8
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 refresh cycles/64ms
• Operating ambient temperature range
 TA = –25°C to +85°C
Features
• ×32 organization
• Single pulsed /RAS
• Burst read/write operation and burst read/single write
operation capability
• Byte control by DQM
• Wide temperature range
 TA = –25°C to +85°C
• Low Power Function below is not supported
 Partal Array Self-Refresh (PASR)
 Auto Temperature Compensated Self-Refresh
 Deep power-down mode
Ordering Information
Part number
EDS51321DBH-6DTS-F
EDS51321DBH-7BTS-F
Organization
(words × bits)
16M × 32
Internal Banks
4
Clock frequency
MHz (max.)
166
133
/CAS latency
3
Package
90-ball FBGA
Document No. E1415E21 (Ver. 2.1)
Date Published March 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2008-2009