EBE21UE8AADA Datasheet, PDF (1/21 Pages) Elpida Memory – 2GB DDR2 SDRAM SO-DIMM

PRELIMINARY DATA SHEET
2GB DDR2 SDRAM SO-DIMM
EBE21UE8AADA (256M words × 64 bits, 2 Ranks)
Description
The EBE21UE8AADA is 256M words × 64 bits, 2 ranks
DDR2 SDRAM Small Outline Dual In-line Memory
Module, mounting 16 pieces of 1G bits DDR2 SDRAM
with sFBGA stacking technology. Read and write
operations are performed at the cross points of the CK
and the /CK. This high-speed data transfer is realized
by the 4 bits prefetch-pipelined architecture. Data
strobe (DQS and /DQS) both for read and write are
available for high speed and reliable data bus design.
By setting extended mode register, the on-chip Delay
Locked Loop (DLL) can be set enable or disable. This
module provides high density mounting without utilizing
surface mount technology. Decoupling capacitors are
mounted beside each SDRAM on the module board.
Note: Do not push the components or drop the
modules in order to avoid mechanical defects,
which may result in electrical defects.
Features
• 200-pin socket type small outline dual in line memory
module (SO-DIMM)
 PCB height: 30.0mm
 Lead pitch: 0.6mm
 Lead-free (RoHS compliant)
• Power supply: VDD = 1.8V ± 0.1V
• Data rate: 533Mbps/400Mbps (max.)
• SSTL_18 compatible I/O
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
(Components)
• Data mask (DM) for write data
• Burst lengths: 4, 8
• /CAS Latency (CL): 3, 4, 5
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• Average refresh period
 7.8µs at 0°C ≤ TC ≤ +85°C
 3.9µs at +85°C < TC ≤ +95°C
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation.
Document No. E0767E10 (Ver. 1.0)
Date Published August 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005